fluctuation of power semiconductor industry: in line with the trend law of bulk commodities, products are closely related to the trend of global gdp, and the industry fluctuation period of 4-5 years is very consistent with the semiconductor cycle law.
industry growth: demand comes from mobile phones, 5g, automobiles, power systems, wind power systems, high-speed rail. the core rule is to increase the content of single semiconductor (silicon).
industry development: all technological progress points to higher power, smaller volume, lower loss and better cost performance.
industry barrier: the mainstream manufacturers participating in the competition are idm mode, which can improve the quality and grasp the cost optimization of each product every year on the premise of scale
domestic power semiconductor idm mode enterprises: at present, idm mode enterprises have more advantages in cost side than fabless, and can pay more attention to domestic wentai technology, jiejie micro electricity and yangjie technology.
power semiconductor is a necessary consumer product for electronic equipment. people need to eat "firewood, rice, oil and salt". machines also need to consume power devices. any power conversion related needs power semiconductor.from the perspective of industry growth, the demand comes from all walks of life, and the core rule is to improve the single semiconductor (silicon) content. from the perspective of industry development, all technological progress points to higher power, smaller volume, lower loss and better cost performance. founder securities expects that in the next 3-4 years, idm enterprises will have more advantages in cost than fabless enterprises.1.industry growth model: demand driventhe industry growth demand comes from all walks of life, and the core rule is to improve the single semiconductor (silicon) content. power semiconductor makes frequency conversion equipment widely used in daily consumption.
◆ mobile phone: power semiconductors related to esd protection are all over the body, which promotes the growing demand for mobile phone power semiconductors.
◆ mobile phone charger: the demand for "flash charging" is gradually increasing, and the number and performance requirements of power semiconductors are increasing.
◆ automobile: power semiconductors are distributed throughout the whole automobile electronic system, promoting the increase of demand for automobile power semiconductors.
◆ power: flexible transmission technology requires a large number of power devices such as igbt.
◆ wind power: renewable clean energy provides a new market for power semiconductors.
◆ high speed rail: with the increase of converter demand, the industry has sustained and stable development.
mobile phone: silicon content of single machine remains stableesd protection is required for all terminals with interfaces on the mobile phone, such as microphone, earphone, headset, speaker, sim card, micro sd, nfc antenna, gps antenna, wifi antenna, touch screen, 2g / 3g / 4g rf antenna, usb interface, lithium battery and power key position. the most mobile phones use more than 20, and the least use more than 10.mobile phone charger: fast charging promotes the further improvement of silicon contentwith the gradual improvement of people's requirements for charging efficiency, there is a "fast charging" mode for mobile phone charging, that is, to achieve high current and power charging by increasing the voltage, but there is a hidden danger in high voltage, which needs to be adjusted by adding mos tube with synchronous rectification; later, a safer "flash charging" appears mode, that is to use low voltage and high current to achieve high-speed charging, which requires more synchronous rectifier mos. at present, gan mos is more common, which can achieve the purpose of less heat and small volume.automobile: silicon content of single car keeps increasingaccording to fuji electric, the core of automotive electronics is mosfet and igbt. power semiconductors are inseparable from the transmission control and braking, steering control in the engine and the driver's drive system as well as the body. in traditional vehicles, the control systems such as poor power steering, auxiliary braking and seats need to be added with motors, so the number of built-in motors in traditional vehicles is growing rapidly, which drives the market growth of mosfet.
in new energy vehicles, in addition to the semiconductor demand used in traditional vehicles, high-voltage products are also needed, such as igbt. the corresponding components include inverter, pct heater, air conditioning control panel, etc.
according to fuji electric, the core of automotive electronics is mosfet and igbt. power semiconductors are inseparable from the transmission control and braking, steering control in the engine and the driver's drive system as well as the body. in traditional vehicles, the control systems such as poor power steering, auxiliary braking and seats need to be added with motors, so the number of built-in motors in traditional vehicles is growing rapidly, which drives the market growth of mosfet.
in new energy vehicles, in addition to the semiconductor demand used in traditional vehicles, high-voltage products are also needed, such as igbt. the corresponding components include inverter, pct heater, air conditioning control panel, etc.
communication: 5g improves the silicon content of base station power supplyelectric power: silicon content per kilometer remains stableigbt and other power devices are widely used in every link of smart grid, rectifier, inverter and facts flexible transmission technology in uhvdc. according to the data released by china industry information network, it is estimated that the investment scale of china's smart grid industry will reach nearly 2300 billion yuan by 2021.wind power: silicon content per megawatt is stablethe inverter equipment of wind power generation can convert the dc12v dc in the battery into the same ac220v ac as the municipal power. the inverter is mainly connected by mos fet and power transformer through analog circuit technology. from 2016 to 2018, the installed capacity of china's wind power increased from 18.73gw to 21gw. in 2019, the installed capacity in the first five months alone increased by 6.88gw, with a rapid growth trend.high speed railway: silicon content of single train keeps stablethe traction converter converts high current into powerful power. each train is equipped with 4 converters, and each converter is equipped with 32 igbt modules. in general, a high-speed rail electric locomotive needs 500 igbt modules, a emu needs 100 igbt modules, and a subway needs 50-80 igbt modules.in 2018, the output of emus in china reached 2724, an increase of 5% year on year. a new round of high-speed railway construction upsurge is underway in the world, and most countries are still in the primary stage of high-speed railway technology research. from the perspective of demand, china's high-speed rail export will have broad international market space.industry development logic: technology drivenoverview: product performance requirements:
1) higher power
2) smaller volume
3) lower loss
4) better price performance.
the product form develops from single diode, mos transistor to integrated igbt, and from silicon substrate to wide band gap semiconductor substrate.
silicon substrate (high loss, high cost performance)
◆ diode: high voltage (high power)
◆ mos tube: high frequency (small volume)
◆ igbt: high voltage high frequency (high power high frequency)
compound semiconductor substrate (low loss, low cost performance)
the wider band gap makes the product's performance and efficiency better than that of the power device on silicon substrate. at present, the price performance aspect is not so advantageous.
future trend: the cost of compound semiconductor manufacturing will be reduced, and the power semiconductor devices based on silicon will be replaced with its advantages in the near future.
silicon substrate: diode (high voltage)diodes are the simplest power devices that allow current to flow only in one direction. diodes act as current switches, often used as rectifiers to convert analog signals into digital signals, and are widely used in power conversion, radio modulation and current steering.silicon substrate: mos tube (high frequency)the power mosfet has the advantages of high speed, low failure rate, low switching loss and good expansibility. it is suitable for low voltage and high current environment, and the required working frequency is higher than other power devices.silicon substrate: igbt (high voltage high frequency)igbt = diode mos transistor. igbt combines the double advantages of mosfet without diode, i.e. low driving power and low saturation voltage. it is widely used in converter systems above 600v, such as ac motor, frequency converter, switching power supply, lighting circuit and other fields.power semiconductor on compound substraterequirements: it is used in power electronic equipment with critical efficiency.
advantages: the band gap width is three times that of silicon, the zero boundary breakdown electric field strength is nine times that of silicon, and the thermal conductivity is higher.
compound semiconductor market spacesic devices are widely used in the field of power electronics, with a broad market prospect. according to yole's prediction, the annual compound growth rate of sic will reach 40% from 2020 to 2022, with new energy vehicles as its largest driving force. gan market is also experiencing rapid development, mainly driven by the demand for power supply and new energy vehicles.gallium nitride (gan) substratethe critical electric field strength of gan is higher than that of silicon wafer, and it has more advantages in the on resistance and breakdown voltage, so as to achieve the purpose of making smaller devices, and its electrical terminals can also be more closely related. at present, gan shows a broad development prospect. although only a few manufacturers show commercial gan technology, many companies have invested in gan technology research and development. gan has the advantages of non mos process compatibility and low cost, and will gradually replace mosfet to develop new applications.silicon carbide (sic) substratendustry barriers and competition pattern
overview of this chapter:
1. advantages of idm mode: the mainstream manufacturers participating in the competition are idm mode, and idm manufacturers are integration of design and manufacturing. the advantages are as follows:
1) the special process of manufacturing products has good confidentiality, product efficiency is improved, and parameter optimization is easier to achieve;
2) the optimization of equipment parameters is more flexible and the large-scale production is more convenient.
2. it has been monopolized by european and american manufacturers for a long time: there are few idm model factories in china, and the core technologies are all in the internal of european and american manufacturers. with their product advantages, they control the delivery cycle, thus controlling the price system of the whole industry.
idm mode: master the core bcd analog circuit technology independently
c-d process: the core process of power integrated circuit.
each bcd process has the advantages of successfully integrating three different manufacturing technologies on the same chip, bringing high reliability, low electromagnetic interference, and reducing chip area.
global power semiconductor market spaceaccording to ihs data statistics, the global market size of power devices in 2018 is about us $39.1 billion, and it is estimated that the market size will grow to us $44.1 billion by 2021, with an annual growth rate of 4.1%, and the market size will grow steadily. at present, the domestic power semiconductor industry chain is becoming more and more perfect, and the technology is also making a breakthrough.at the same time, china is also the world's largest consumer of power semiconductors. in 2018, the market demand reached us $13.8 billion, with an annual growth rate of 9.5%, accounting for 35% of the global demand. it is expected that china's power semiconductors will continue to maintain a high growth rate in the future. in 2021, the market size is expected to reach us $15.9 billion, with an annual growth rate of 4.8%.market share of global power semiconductor companiesin 2018, none of the top 8 companies in the global power semiconductor market had a chinese enterprise, accounting for 55.4% of the total market share. it shows that the current power semiconductor manufacturers are mainly europe, the united states and japan, while the chinese power semiconductor manufacturers still need to continue to catch up, strengthen themselves and face the international market.in 2018, the sales scale of china's mosfet is about 18.3 billion yuan, among which only one chinese native enterprise, china resources microelectronics, has a market share of 8.7%, while the top two overseas enterprises have a total market share of 45.3%, accounting for nearly half of the market share. therefore, china's mosfet market still relies heavily on imports, and there is a huge space for import substitution in the future.price of power semiconductor is firmthe delivery date and price of products are mainly firmly controlled by european and american enterprises.the delivery time of mosfet, igbt and diode products is generally more than 20 weeks, and the trend of delivery time is shortened, which shows that the supplier has sufficient inventory. with the development of 5g construction and the rise of new energy electric vehicles, the demand of power semiconductor market will be effectively driven, thus promoting the rapid development of semiconductor industry. it is predicted that the power semiconductor market will have a bright future and the delivery period will gradually grow.key enterprises in the industrywen tai technology（600475）wentai technology has announced that it has completed the acquisition of anshi semiconductor. the former standard products business unit of nxp, with more than 60 years of semiconductor industry and industry experience, the group began to operate independently in early 2017, with its headquarters in netherlandish. its products are widely used in automobile, industrial non energy, mobile and wearable equipment, consumer and computer fields.thyristor domestic faucet. the company has been established for more than 20 years, focusing on semiconductor power devices, especially in the subdivision of thyristor protective devices. among them, the revenue of thyristor accounts for more than 60%, and the domestic market share is more than 45%, second only to the overseas giant st and nxp. in addition to the continuous development of thyristor market, the company also considers the reasonable diversification of product structure. make full use of the company's technology, channel, brand advantages and other resources in the field of discrete devices, so that the company's product series can complement each other.yang jie technology（300373）domestic discrete device leader. in the domestic power device market, the market share of yangjie technology ranks the second. the company adopts idm mode to realize the whole industrial chain layout of discrete device chip design, wafer manufacturing, device non module packaging, terminal sales, etc. the company's products are mainly concentrated in semiconductor devices and semiconductor chips, of which the market share of photovoltaic diode product line and gpp wafer product line is more than 40%.